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| 2MBI400U2B-060 IGBT Module U-Series Features * High speed switching * Voltage drive * Low inductance module structure 600V / 400A 2 in one-package 2. Equivalent circuit Equivalent Circuit Schematic Applications * Inverter for Motor drive * AC and DC Servo drive amplifier * Uninterruptible power supply * Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector current Symbol VCES VGES IC ICp -IC -IC pulse PC Tj Tstg Viso Conditions Rating 650 20 400 800 400 800 1250 +150 -40 to +125 2500 3.5 3.5 Unit V V A Continuous 1ms Collector Power Dissipation Junction temperature Storage temperature Isolation voltage between terminal and copper base *1 Screw Torque Mounting *2 Terminals *2 1 device W C VAC N*m AC:1min. *1 : All terminals should be connected together when isolation test will be done. *2 : Recommendable value : Mounting 2.5 to 3.5N*m(M5), Terminal 2.5 to 3.5 N*m(M5) Electrical characteristics (at Tj=25C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbols ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) trr R lead Conditions VGE=0V, VCE=600V VCE=0V, VGE=20V VCE=20V, IC=400mA VGE=15V, IC=400A Tj=25C Tj=125C Tj=25C Tj=125C VCE=10V, VGE=0V, f=1MHz VCC=300V IC=400A VGE=15V RG= 6.8 VGE=0V IF=400A Tj=25C Tj=125C Tj=25C Tj=125C Characteristics Min. Typ. - - - - 6.2 6.7 - 2.25 - 2.50 - 1.85 - 2.10 - 29 - 0.40 - 0.22 - 0.16 - 0.48 - 0.07 - 2.00 - 2.05 - 1.60 - 1.65 - - - 0.97 Unit Max. 2.0 400 7.7 2.55 - - - - 1.20 0.60 - 1.20 0.45 2.35 - - - 0.35 - mA nA V V Input capacitance Turn-on time nF s Turn-off time Forward on voltage V Reverse recovery time Lead resistance, terminal-chip*3 IF=400A s m *3:Biggest internal terminal resistance among arm. Thermal resistance characteristics Items Thermal resistance Contact Thermal resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f)*4 Conditions IGBT FWD With thermal compound Characteristics Min. Typ. - - - - - 0.025 Unit Max. 0.10 0.16 - C/W C/W C/W *4 : This is the value which is defined mounting on the additional cooling fin with thermal compound. 2MBI400U2B-060 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25C / chip 1000 1000 VGE=20V15V IGBT Module Collector current vs. Collector-Emitter voltage (typ.) Tj= 125C / chip 800 Collector current : Ic [A] VGE=20V15V 12V Collector current : Ic [A] 800 12V 600 10V 600 10V 400 400 200 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 200 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 1000 Tj=25C Tj=125C Collector - Emitter voltage : VCE [ V ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25C / chip 10.0 800 Collector current : Ic [A] 8.0 600 6.0 400 4.0 Ic=800A Ic=400A Ic=200A 200 2.0 0 0 1 2 3 4 0.0 5 10 15 20 25 Collector-Emitter voltage : VCE [V] Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) 100.0 Capacitance : Cies, Coes, Cres [ nF ] Cies Collector-Emitter voltage : VCE [ 100V/div ] Gate - Emitter voltage : VGE [ 5V/div ] Dynamic Gate charge (typ.) Vcc=300V, Ic=400A, Tj= 25C 10.0 Cres Coes 1.0 VGE VCE 0 400 800 1200 1600 0.1 0 10 20 30 Collector-Emitter voltage : VCE [V] Gate charge : Qg [ nC ] 2MBI400U2B-060 IGBT Module Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=6.8, Tj= 25C 10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=6.8, Tj=125C 1000 toff 1000 ton toff tr ton 100 tr tf 100 tf 10 0 200 400 600 800 Collector current : Ic [ A ] 10 0 200 400 600 800 Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=400A, VGE=15V, Tj= 25C 10000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 40 Switching loss vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=6.8 30 Eoff(125C) Eon(125C) Eoff(25C) 1000 toff ton 100 tr tf 20 Eon(25C) 10 Err(125C) Err(25C) 0 0 200 400 600 800 10 1.0 10.0 Gate resistance : Rg [ ] 100.0 Collector current : Ic [ A ] Switching loss vs. Gate resistance (typ.) Vcc=300V, Ic=400A, VGE=15V, Tj= 125C 60 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 50 40 30 20 10 0 1.0 10.0 Gate resistance : Rg [ ] Err 100.0 1000 Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 6.8 ,Tj <= 125C Eon Collector current : Ic [ A ] 800 600 Eoff 400 200 0 0 200 400 600 800 Collector - Emitter voltage : VCE [ V ] 2MBI400U2B-060 a IGBT Module Forward current vs. Forward on voltage (typ.) chip 1000 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Reverse recovery characteristics (typ.) Vcc=300V, VGE=15V, Rg=6.8 1000 Forward current : IF [ A ] 800 Tj=25C Tj=125C 600 100 trr (125C) Irr (125C) Irr (25C) trr (25C) 400 200 0 0.0 1.0 2.0 3.0 Forward on voltage : VF [ V ] 10 0 200 400 600 800 Forward current : IF [ A ] Transient thermal resistance (max.) 1.000 Thermal resistanse : Rth(j-c) [C ] /W FWD 0.100 IGBT 0.010 0.001 0.001 0.010 0.100 1.000 Pulse width : Pw [ sec ] Outline Drawings, mm M233 |
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